Technical parameters/dissipated power (Max): 6000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5152
|
Microsemi | 类似代替 | TO-39-3 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
2N5337
|
Microsemi | 完全替代 | TO-39-3 |
Trans GP BJT NPN 80V 5A 3Pin TO-39
|
||
2N5337
|
Central Semiconductor | 完全替代 | TO-205 |
Trans GP BJT NPN 80V 5A 3Pin TO-39
|
||
2N5784
|
New Jersey Semiconductor | 类似代替 |
Small Signal Transistors
|
|||
2N5784
|
Microsemi | 类似代替 | TO-5 |
Small Signal Transistors
|
||
2N5784
|
Central Semiconductor | 类似代替 | TO-39-3 |
Small Signal Transistors
|
||
2N5784
|
SEME-LAB | 类似代替 |
Small Signal Transistors
|
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