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Model IRLR024NTRRPBF

Description 场效应管(MOSFET) IRLR024NTRRPBF DPAK

Brand: Infineon

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(5172) Minimum order quantity(1)

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Technical parameters/rated power:	38 W
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	45W (Tc)
Technical parameters/drain source voltage (Vds):	55 V
Technical parameters/Continuous drain current (Ids):	17A
Technical parameters/rise time:	74 ns
Technical parameters/Input capacitance (Ciss):	480pF @25V(Vds)
Technical parameters/descent time:	29 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	45W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Packaging:	TO-252-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Not Recommended for New Designs
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	lead-free

Alternative material

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IRLR024NPBF	Infineon	类似代替	TO-252-3	N 通道功率 MOSFET 13A 至 19A，Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。	PDF
IRLR024NTRPBF	International Rectifier	类似代替	TO-252-3	INFINEON IRLR024NTRPBF 晶体管, MOSFET, N沟道, 17 A, 55 V, 0.065 ohm, 10 V, 2 V	PDF
IRLR024NTRPBF	Infineon	类似代替	TO-252-3	INFINEON IRLR024NTRPBF 晶体管, MOSFET, N沟道, 17 A, 55 V, 0.065 ohm, 10 V, 2 V	PDF
STD12NF06LT4	ST Microelectronics	功能相似	TO-252-3	STMICROELECTRONICS STD12NF06LT4 晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 3 V	PDF