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Model IRFR320
Description Transistor NPN MOS IRFR320 INTERNATIONAL RECTIFIER RoHS Ampere=3.1V=400 TO252/DPAK
Product QR code
Brand: International Rectifier
Packaging TO-252
Delivery time
Packaging method Bulk
Standard packaging quantity 1
1.5  yuan 1.5yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3353) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

400 V

 

Technical parameters/rated current:

3.10 A

 

Technical parameters/drain source resistance:

1.80 Ω (max)

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

42.0 W

 

Technical parameters/drain source voltage (Vds):

400 V

 

Technical parameters/Leakage source breakdown voltage:

400V (min)

 

Technical parameters/Continuous drain current (Ids):

3.10 A

 

Technical parameters/rise time:

14.0 ns

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-252

 

Dimensions/Packaging:

TO-252

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Bulk

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFR320PBF IRFR320PBF Vishay Intertechnology 完全替代 TO-252
Trans MOSFET N-CH 400V 3.1A 3Pin(2+Tab) DPAK
IRFR320PBF IRFR320PBF VISHAY 完全替代 TO-252-3
Trans MOSFET N-CH 400V 3.1A 3Pin(2+Tab) DPAK
PDF
IRFR320PBF IRFR320PBF LiteOn 完全替代 DPAK-2
Trans MOSFET N-CH 400V 3.1A 3Pin(2+Tab) DPAK
IRFR320TRPBF IRFR320TRPBF Vishay Intertechnology 功能相似 DPAK
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
PDF
IRFR320TRPBF IRFR320TRPBF Vishay Siliconix 功能相似 TO-252-3
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
PDF

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