Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 3.10 A
Technical parameters/rated power: 42 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.8 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/leakage source breakdown voltage: 400 V
Technical parameters/Continuous drain current (Ids): 3.10 A
Technical parameters/rise time: 14 ns
Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 2000
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR320PBF
|
Vishay Intertechnology | 类似代替 | TO-252 |
功率MOSFET Power MOSFET
|
||
IRFR320PBF
|
VISHAY | 类似代替 | TO-252-3 |
功率MOSFET Power MOSFET
|
||
IRFR320PBF
|
LiteOn | 类似代替 | DPAK-2 |
功率MOSFET Power MOSFET
|
||
|
IRFR320TRRPBF
|
Vishay Intertechnology | 功能相似 | TO-252 |
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
IRFR320TRRPBF
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
IRFR320TRRPBF
|
VISHAY | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
STD5NK40ZT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD5NK40ZT4 晶体管, MOSFET, N沟道, 3 A, 400 V, 1.47 ohm, 10 V, 3.75 V
|
||
STD7NK40ZT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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