Technical parameters/threshold voltage: 2V ~ 4V
Encapsulation parameters/Encapsulation: DPAK-2
External dimensions/packaging: DPAK-2
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR320PBF
|
Vishay Intertechnology | 类似代替 | TO-252 |
功率MOSFET Power MOSFET
|
||
IRFR320PBF
|
VISHAY | 类似代替 | TO-252-3 |
功率MOSFET Power MOSFET
|
||
IRFR320PBF
|
LiteOn | 类似代替 | DPAK-2 |
功率MOSFET Power MOSFET
|
||
IRFR320TRRPBF
|
Vishay Intertechnology | 功能相似 | TO-252 |
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
IRFR320TRRPBF
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
IRFR320TRRPBF
|
VISHAY | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
STD5NK40ZT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD5NK40ZT4 晶体管, MOSFET, N沟道, 3 A, 400 V, 1.47 ohm, 10 V, 3.75 V
|
||
STD7NK40ZT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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