Technical parameters/dissipated power: | 180W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/rise time: | 300 ns |
|
Technical parameters/Input capacitance (Ciss): | 2745pF @25V(Vds) |
|
Technical parameters/descent time: | 105 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 180W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Rail |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF76439S3S
|
ON Semiconductor | 功能相似 | TO-263-3 |
71A ， 60V ， 0.014 Ohm的N通道，逻辑电平UltraFET功率MOSFET 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
||
HUF76439S3ST
|
Fairchild | 类似代替 | TO-263-3 |
HUF76439S3S: 60 V、71 A、14 mΩ、N 沟道逻辑电平 UltraFET 功率 MOSFET
|
||
HUF76439S3ST
|
ON Semiconductor | 类似代替 | TO-263-3 |
HUF76439S3S: 60 V、71 A、14 mΩ、N 沟道逻辑电平 UltraFET 功率 MOSFET
|
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