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Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 300 ns
Technical parameters/Input capacitance (Ciss): 2745pF @25V(Vds)
Technical parameters/rated power (Max): 180 W
Technical parameters/descent time: 105 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 180000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF76439S3S
|
ON Semiconductor | 功能相似 | TO-263-3 |
71A ， 60V ， 0.014 Ohm的N通道，逻辑电平UltraFET功率MOSFET 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
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