Technical parameters/rated voltage (DC): | 60.0 V |
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Technical parameters/rated current: | 71.0 A |
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Technical parameters/drain source resistance: | 10.0 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 180 W |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | 60.0 V |
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Technical parameters/breakdown voltage of gate source: | ±16.0 V |
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Technical parameters/Continuous drain current (Ids): | 71.0 A |
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Technical parameters/rise time: | 300 ns |
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Technical parameters/Input capacitance (Ciss): | 2745pF @25V(Vds) |
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Technical parameters/rated power (Max): | 180 W |
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Technical parameters/descent time: | 105 ns |
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Technical parameters/dissipated power (Max): | 180W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF76439S3S
|
ON Semiconductor | 功能相似 | TO-263-3 |
71A ， 60V ， 0.014 Ohm的N通道，逻辑电平UltraFET功率MOSFET 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
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