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Model HUF75829D3S

Description 18A ， 150V ， 0.110 Ohm的N通道， UltraFET功率MOSFET 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET

Brand: Fairchild

Packaging TO-252-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	150 V
Technical parameters/rated current:	18.0 A
Technical parameters/drain source resistance:	110 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	110 W
Technical parameters/drain source voltage (Vds):	150 V
Technical parameters/Leakage source breakdown voltage:	150 V
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	18.0 A
Technical parameters/rise time:	30 ns
Technical parameters/Input capacitance (Ciss):	1080pF @25V(Vds)
Technical parameters/rated power (Max):	110 W
Technical parameters/descent time:	30 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	110W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Length:	6.73 mm
Dimensions/Width:	6.22 mm
Dimensions/Height:	2.39 mm
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free