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Model HUF75829D3ST
Description MOSFET N-CH 150V 18A DPAK
Product QR code
Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9344) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 150 V

Technical parameters/rated current: 18.0 A

Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 110 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 110 W

Technical parameters/drain source voltage (Vds): 150 V

Technical parameters/leakage source breakdown voltage: 150 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 18.0 A

Technical parameters/rise time: 30 ns

Technical parameters/Input capacitance (Ciss): 1080pF @25V(Vds)

Technical parameters/descent time: 30 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): 55 ℃

Technical parameters/dissipated power (Max): 110W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
HUF75829D3S HUF75829D3S Fairchild 类似代替 TO-252-3
18A ， 150V ， 0.110 Ohm的N通道， UltraFET功率MOSFET 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET
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