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Model HUF75829D3ST
Description MOSFET N-CH 150V 18A DPAK
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4111) Minimum order quantity(1)
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Technical parameters/dissipated power:

110W (Tc)

 

Technical parameters/drain source voltage (Vds):

150 V

 

Technical parameters/Input capacitance (Ciss):

1080pF @25V(Vds)

 

Technical parameters/dissipated power (Max):

110W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
HUF75829D3S HUF75829D3S Fairchild 类似代替 TO-252-3
18A ， 150V ， 0.110 Ohm的N通道， UltraFET功率MOSFET 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET
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