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Model FQD1N80TM

Description QFET ® N-channel MOSFET, up to 5.9A, Fairchild Semiconductor's new QFET ® Planar MOSFETs use advanced patented technology to provide optimal performance for a wide range of applications, including power supplies, PFC (power factor correction), DC-DC converters, plasma display panels (PDP), lighting ballasts, and motion control. They reduce on state losses by lowering the on resistance (RDS (on)), and reduce switching losses by lowering the gate charge (Qg) and output capacitance (Coss). By utilizing advanced QFET technology ® Fairchild can provide higher quality factor (FOM) than competing planar MOSFET devices in terms of process technology. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (<250V) types. Advanced silicon technology provides smaller chip sizes, which are integrated into various industrial standards and heat-resistant enhanced packages. Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot, reducing junction capacitance and reverse recovery charge, and maintaining system startup and operation for longer periods of time without the need for additional external components.

Brand: ON Semiconductor

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(7223) Minimum order quantity(1)

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	15.5 Ω
Technical parameters/dissipated power:	2.5 W
Technical parameters/threshold voltage:	5 V
Technical parameters/drain source voltage (Vds):	800 V
Technical parameters/rise time:	25 ns
Technical parameters/Input capacitance (Ciss):	150pF @25V(Vds)
Technical parameters/rated power (Max):	2.5 W
Technical parameters/descent time:	25 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2500 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Length:	6.6 mm
Dimensions/Width:	6.1 mm
Dimensions/Height:	2.3 mm
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power management, lighting, industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	FQD1N80TF	Fairchild	类似代替	TO-252-3	Trans MOSFET N-CH 800V 1A 3Pin(2+Tab) DPAK T/R	PDF
	STD1NK80ZT4	ST Microelectronics	功能相似	TO-252-3	STMICROELECTRONICS STD1NK80ZT4 功率场效应管, MOSFET, N沟道, 1 A, 800 V, 13 ohm, 10 V, 3.75 V