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Model STD1NK80ZT4
Description STMICROELECTRONICS STD1NK80ZT4 功率场效应管, MOSFET, N沟道, 1 A, 800 V, 13 ohm, 10 V, 3.75 V
Product QR code
Brand: ST Microelectronics
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.76  yuan 1.76yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1461) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

800 V

 

Technical parameters/rated current:

1.00 A

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

13 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

45 W

 

Technical parameters/threshold voltage:

3.75 V

 

Technical parameters/Input capacitance:

160 pF

 

Technical parameters/gate charge:

7.70 nC

 

Technical parameters/drain source voltage (Vds):

800 V

 

Technical parameters/Leakage source breakdown voltage:

800 V

 

Technical parameters/breakdown voltage of gate source:

±30.0 V

 

Technical parameters/Continuous drain current (Ids):

1.00 A

 

Technical parameters/rise time:

30 ns

 

Technical parameters/Input capacitance (Ciss):

160pF @25V(Vds)

 

Technical parameters/rated power (Max):

45 W

 

Technical parameters/descent time:

55 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

45000 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.6 mm

 

Dimensions/Width:

6.2 mm

 

Dimensions/Height:

2.4 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

O

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQD1N80TM FQD1N80TM ON Semiconductor 功能相似 TO-252-3
FAIRCHILD SEMICONDUCTOR FQD1N80TM 功率场效应管, MOSFET, N沟道, 1 A, 800 V, 15.5 ohm, 10 V, 5 V
PDF
FQD1N80TM FQD1N80TM Fairchild 功能相似 TO-252-3
FAIRCHILD SEMICONDUCTOR FQD1N80TM 功率场效应管, MOSFET, N沟道, 1 A, 800 V, 15.5 ohm, 10 V, 5 V
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