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Model FQD1N80TF
Description Trans MOSFET N-CH 800V 1A 3Pin(2+Tab) DPAK T/R
Product QR code
Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3139) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 800 V

Technical parameters/rated current: 1.00 A

Technical parameters/drain source resistance: 15.5 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.5W (Ta), 45W (Tc)

Technical parameters/drain source voltage (Vds): 800 V

Technical parameters/leakage source breakdown voltage: 800 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 1.00 A

Technical parameters/Input capacitance (Ciss): 195pF @25V(Vds)

Technical parameters/rated power (Max): 2.5 W

Technical parameters/dissipated power (Max): 2.5W (Ta), 45W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQD1N80TM FQD1N80TM ON Semiconductor 类似代替 TO-252-3
FAIRCHILD SEMICONDUCTOR FQD1N80TM 功率场效应管, MOSFET, N沟道, 1 A, 800 V, 15.5 ohm, 10 V, 5 V
PDF
FQD1N80TM FQD1N80TM Fairchild 类似代替 TO-252-3
FAIRCHILD SEMICONDUCTOR FQD1N80TM 功率场效应管, MOSFET, N沟道, 1 A, 800 V, 15.5 ohm, 10 V, 5 V
PDF

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