Technical parameters/number of pins: | 8 |
|
Technical parameters/drain source resistance: | 0.015 Ω |
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Technical parameters/polarity: | Dual N-Channel |
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Technical parameters/dissipated power: | 1 W |
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Technical parameters/threshold voltage: | 1 V |
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Technical parameters/drain source voltage (Vds): | 33 V |
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Technical parameters/Continuous drain current (Ids): | 6.5A |
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Technical parameters/rise time: | 3 ns |
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Technical parameters/Input capacitance (Ciss): | 360pF @10V(Vds) |
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Technical parameters/rated power (Max): | 1 W |
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Technical parameters/descent time: | 9 ns |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 1500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | WMini8-F1 |
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Dimensions/Packaging: | WMini8-F1 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4936BDY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET N-CH DUAL 30V 8-SOIC
|
||
SI4936BDY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET N-CH DUAL 30V 8-SOIC
|
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