Technical parameters/drain source resistance: 35 mΩ
Technical parameters/polarity: Dual N
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 6.9A
Technical parameters/Input capacitance (Ciss): 530pF @15V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FC8V33030L
|
Panasonic | 功能相似 | WMini8-F1 |
PANASONIC ELECTRONIC COMPONENTS FC8V33030L 双路场效应管, MOSFET, 双N沟道, 6.5 A, 33 V, 0.015 ohm, 10 V, 1 V
|
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