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Model SI4936BDY-T1-GE3
Description VISHAY SI4936BDY-T1-GE3 Field effect transistor, MOSFET, dual N-channel, 30V, 6.9A
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method
Standard packaging quantity 1
3.36  yuan 3.36yuan
5+:
$ 4.5320
25+:
$ 4.1963
50+:
$ 3.9613
100+:
$ 3.8606
500+:
$ 3.7934
2500+:
$ 3.7095
5000+:
$ 3.6759
10000+:
$ 3.6256
Quantity
5+
25+
50+
100+
500+
Price
$4.5320
$4.1963
$3.9613
$3.8606
$3.7934
Price $ 4.5320 $ 4.1963 $ 3.9613 $ 3.8606 $ 3.7934
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4864) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.051 Ω

Technical parameters/polarity: Dual N-Channel

Technical parameters/dissipated power: 2 W

Technical parameters/threshold voltage: 3 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 6.90 A

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FC8V33030L FC8V33030L Panasonic 功能相似 WMini8-F1
PANASONIC ELECTRONIC COMPONENTS FC8V33030L 双路场效应管, MOSFET, 双N沟道, 6.5 A, 33 V, 0.015 ohm, 10 V, 1 V
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