Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 1.00 A |
|
Technical parameters/drain source resistance: | 540 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 1.30 W |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Technical parameters/Continuous drain current (Ids): | 1.00 A |
|
Technical parameters/rise time: | 16.0 ns |
|
Technical parameters/Input capacitance (Ciss): | 180pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 1.3 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | DIP-4 |
|
Dimensions/Packaging: | DIP-4 |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD110PBF
|
Vishay Semiconductor | 完全替代 | DIP-4 |
MOSFET N-CH 100V 1A 4-DIP
|
||
IRFD110PBF
|
LiteOn | 完全替代 | HEXPDIP |
MOSFET N-CH 100V 1A 4-DIP
|
||
IRFD110PBF
|
Vishay Siliconix | 完全替代 | DIP-4 |
MOSFET N-CH 100V 1A 4-DIP
|
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