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Encapsulation parameters/Encapsulation: HEXPDIP
External dimensions/packaging: HEXPDIP
Other/Delete 동업체: Vishay
Other/Delete 품카테 High speed: MOSFETs
Other/Delete: General Purpose MOSFETs
Other/궟동: Single
Other/Case/Package: HEXPDIP
Other/Soft 랜イ동터극동: N-Channel
Other/ハ레イ?동항복압: 100 V
Other/Link Files 레イ류: 1 A
Other/력발산: 1300 mW
Other/저항 Drain Source RDS (on): 0.54 Ohm @ 10 V
Other/Typical 하강: 9.4 ns
Other/Typical 상승: 16 ns
Other/표준오프い Contact Us: 15 ns
Other/ị동: TUBE
Other/게イSoft - ?동항복압: 20 V
Other/동대작동온도: 175 C
Other/π소작동온도: 55 C
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD110
|
VISHAY | 完全替代 | DIP-4 |
MOSFET N-CH 100V 1A 4-DIP
|
||
IRFD110
|
Vishay Siliconix | 完全替代 | DIP-4 |
MOSFET N-CH 100V 1A 4-DIP
|
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