Technical parameters/dissipated power: 1.3W (Ta)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 180pF @25V(Vds)
Technical parameters/rated power (Max): 1.3 W
Technical parameters/dissipated power (Max): 1.3W (Ta)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD110
|
VISHAY | 完全替代 | DIP-4 |
MOSFET N-CH 100V 1A 4-DIP
|
||
IRFD110
|
Vishay Siliconix | 完全替代 | DIP-4 |
MOSFET N-CH 100V 1A 4-DIP
|
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