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Model 2N5457G

Description JFET的 - 通用型N沟道 - 耗尽 JFETs − General Purpose N−Channel − Depletion

Brand: ON Semiconductor

Packaging TO-226-3

Delivery time

Packaging method Bulk

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	25.0 V
Technical parameters/rated current:	10.0 mA
Technical parameters/drain source resistance:	2.00 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	310 mW
Technical parameters/drain source voltage (Vds):	25 V
Technical parameters/breakdown voltage of gate source:	25.0 V
Technical parameters/breakdown voltage:	25 V
Technical parameters/Input capacitance (Ciss):	7pF @15V(Vds)
Technical parameters/rated power (Max):	310 mW
Technical parameters/operating temperature (Max):	135 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	310 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-226-3
Dimensions/Height:	5.33 mm
Dimensions/Packaging:	TO-226-3
Physical parameters/operating temperature:	135℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Bulk
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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