Technical parameters/drain source resistance: 12 Ω
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage: 25 V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.58 mm
External dimensions/width: 3.86 mm
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Power management, what????
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5457G
|
ON Semiconductor | 功能相似 | TO-226-3 |
JFET的 - 通用型N沟道 - 耗尽 JFETs − General Purpose N−Channel − Depletion
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||
J108
|
Vishay Semiconductor | 功能相似 | TO-92 |
N-channel silicon junction FETs
|
||
J108
|
Toshiba | 功能相似 |
N-channel silicon junction FETs
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