Technical parameters/breakdown voltage of gate source: 25 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Physical parameters/operating temperature: 55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5457G
|
ON Semiconductor | 功能相似 | TO-226-3 |
JFET的 - 通用型N沟道 - 耗尽 JFETs − General Purpose N−Channel − Depletion
|
||
J108
|
Vishay Semiconductor | 功能相似 | TO-92 |
N-channel silicon junction FETs
|
||
J108
|
Toshiba | 功能相似 |
N-channel silicon junction FETs
|
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