Technical parameters/rated current: | 8.00 A |
|
Technical parameters/drain source resistance: | 0.85 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 125 W |
|
Technical parameters/threshold voltage: | 4 V |
|
Technical parameters/drain source voltage (Vds): | 500 V |
|
Technical parameters/Leakage source breakdown voltage: | 500V (min) |
|
Technical parameters/Continuous drain current (Ids): | 8.00 A |
|
Technical parameters/rise time: | 23.0 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Packaging: | TO-220 |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
Customs information/HTS code: | 85412900951 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP10P6F6
|
ST Microelectronics | 功能相似 | TO-220-3 |
P沟道60 V , 0.15 I© (典型值) , 10 A STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET采用DPAK和TO- 220封装 P-channel 60 V, 0.15 Ω typ., 10 A STripFET⢠VI DeepGATE⢠Power MOSFET in DPAK and TO-220 packages
|
||
SUP75N06-08
|
Vishay Siliconix | 功能相似 | TO-220 |
MOSFET 60V 75A 250W
|
||
SUP75N06-08
|
Visay | 功能相似 |
MOSFET 60V 75A 250W
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