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Model IRFS3107PBF

Description INFINEON IRFS3107PBF 晶体管, MOSFET, N沟道, 230 A, 75 V, 0.0025 ohm, 10 V, 2.35 V

Brand: Infineon

Packaging TO-263-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated power:	370 W
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.0025 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	370 W
Technical parameters/threshold voltage:	2.35 V
Technical parameters/drain source voltage (Vds):	75 V
Technical parameters/Continuous drain current (Ids):	230A
Technical parameters/rise time:	110 ns
Technical parameters/Input capacitance (Ciss):	9370pF @50V(Vds)
Technical parameters/descent time:	100 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	370000 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-263-3
Dimensions/Height:	4.83 mm
Dimensions/Packaging:	TO-263-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Other/Manufacturing Applications:	Industrial, Power Management, Battery Operated Drive, Power Management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17

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IRFS3107TRLPBF	International Rectifier	类似代替	TO-263-3	晶体管, MOSFET, N沟道, 195 A, 75 V, 0.0025 ohm, 10 V, 4 V	PDF
IRFS3207ZPBF	Infineon	类似代替	TO-263-3	INFINEON IRFS3207ZPBF 晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V
IRFS3207ZPBF	Vishay Semiconductor	类似代替	TO-252-3	INFINEON IRFS3207ZPBF 晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V	PDF
STB160N75F3	ST Microelectronics	功能相似	TO-263-3	N 通道 STripFET™，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics	PDF