Technical parameters/number of pins: | 4 |
|
Technical parameters/drain source resistance: | 3.2 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 106 W |
|
Technical parameters/threshold voltage: | 3 V |
|
Technical parameters/drain source voltage (Vds): | 40 V |
|
Technical parameters/Continuous drain current (Ids): | 100A |
|
Technical parameters/Input capacitance (Ciss): | 2410pF @20V(Vds) |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 106 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | SOT-669 |
|
Dimensions/Length: | 5 mm |
|
Dimensions/Width: | 4.1 mm |
|
Dimensions/Height: | 1.1 mm |
|
Dimensions/Packaging: | SOT-669 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ |
|
Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Cut Tape (CT) |
|
Other/Manufacturing Applications: | Consumer Electronics, Power Management, Motor Drive & Control, Communications & Networking, Industrial |
|
Compliant with standards/RoHS standards: | Exempt |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PH4840S,115
|
Nexperia | 类似代替 | SOT-669 |
Trans MOSFET N-CH 40V 94.5A 5Pin(4+Tab) LFPAK T/R
|
||
PSMN4R0-40YS
|
NXP | 类似代替 | SOT-669 |
N 通道 MOSFET，40V 至 55V，Nexperia ### MOSFET 晶体管，NXP Semiconductors
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||
PSMN4R0-40YS,115
|
Nexperia | 类似代替 | SOT-669-4 |
Single N-Channel 40V 4.2mOhm 38NC 106W Silicon SMT Mosfet - LFPAK-4
|
||
PSMN4R0-40YS,115
|
NXP | 类似代替 | SOT-669 |
Single N-Channel 40V 4.2mOhm 38NC 106W Silicon SMT Mosfet - LFPAK-4
|
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