Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 62.5W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 40 V |
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Technical parameters/Continuous drain current (Ids): | 94.5 A |
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Technical parameters/rise time: | 35 ns |
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Technical parameters/Input capacitance (Ciss): | 3660pF @10V(Vds) |
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Technical parameters/rated power (Max): | 62.5 W |
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Technical parameters/descent time: | 31 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 62.5W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 5 |
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Encapsulation parameters/Encapsulation: | SOT-669 |
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Dimensions/Packaging: | SOT-669 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PH4840S,115
|
Nexperia | 功能相似 | SOT-669 |
Trans MOSFET N-CH 40V 94.5A 5Pin(4+Tab) LFPAK T/R
|
||
PSMN4R0-40YS
|
NXP | 功能相似 | SOT-669 |
NXP PSMN4R0-40YS 晶体管, MOSFET, N沟道, 100 A, 40 V, 3.2 mohm, 10 V, 3 V
|
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