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Model PSMN4R0-40YS,115
Description Single N-Channel 40V 4.2mOhm 38NC 106W Silicon SMT Mosfet - LFPAK-4
Product QR code
Brand: NXP
Packaging SOT-669
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.38  yuan 3.38yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7348) Minimum order quantity(1)
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Technical parameters/drain source resistance:

0.0032 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

106 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/drain source voltage (Vds):

40 V

 

Technical parameters/Continuous drain current (Ids):

100 A

 

Technical parameters/rise time:

19 ns

 

Technical parameters/Input capacitance (Ciss):

2410pF @20V(Vds)

 

Technical parameters/rated power (Max):

106 W

 

Technical parameters/descent time:

12 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

106W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

SOT-669

 

Dimensions/Packaging:

SOT-669

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PSMN4R0-40YS PSMN4R0-40YS NXP 类似代替 SOT-669
NXP PSMN4R0-40YS 晶体管, MOSFET, N沟道, 100 A, 40 V, 3.2 mohm, 10 V, 3 V
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