Technical parameters/number of pins: | 8 |
|
Technical parameters/drain source resistance: | 0.08 Ω |
|
Technical parameters/dissipated power: | 2 W |
|
Technical parameters/threshold voltage: | 2.8 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Input capacitance (Ciss): | 250pF @20V(Vds) |
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Technical parameters/rated power (Max): | 2 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 2000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.45 mm |
|
Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Industrial, consumer electronics, communication and networking, power management |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9952PBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF9952PBF 双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 100 mohm, 10 V, 1 V
|
||
IRF9952TRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON IRF9952TRPBF 双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V
|
||
IRF9952TRPBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF9952TRPBF 双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V
|
||
SI4532CDY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
VISHAY SI4532CDY-T1-GE3 双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 38 mohm, 10 V, 1 V
|
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