Technical parameters/rated current: | 3.50 A |
|
Technical parameters/polarity: | N-Channel, P-Channel |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/product series: | IRF9952 |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 3.50 A |
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Technical parameters/rise time: | 14.0 ns |
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Technical parameters/thermal resistance: | 62.5℃/W (RθJA) |
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Technical parameters/Input capacitance (Ciss): | 190pF @15V(Vds) |
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Technical parameters/rated power (Max): | 2 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7105TRPBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7105TRPBF 双路场效应管, MOSFET, N和P沟道, 3.5 A, 25 V, 0.083 ohm, 10 V, 3 V
|
||
IRF7317PBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7317PBF 双路场效应管, MOSFET, N和P沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
|
||
IRF7317PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7317PBF 双路场效应管, MOSFET, N和P沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
|
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