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Model IRF7105TRPBF

Description INFINEON IRF7105TRPBF 双路场效应管, MOSFET, N和P沟道, 3.5 A, 25 V, 0.083 ohm, 10 V, 3 V

Brand: Infineon

Packaging SOIC-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated power:	2 W
Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.083 Ω
Technical parameters/polarity:	N-Channel, P-Channel
Technical parameters/dissipated power:	2 W
Technical parameters/threshold voltage:	3 V
Technical parameters/drain source voltage (Vds):	25 V
Technical parameters/Continuous drain current (Ids):	3.5A/2.3A
Technical parameters/Input capacitance (Ciss):	330pF @15V(Vds)
Technical parameters/rated power (Max):	2 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Length:	5 mm
Dimensions/Width:	4 mm
Dimensions/Height:	1.5 mm
Dimensions/Packaging:	SOIC-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Industrial, Power Management, Industrial, Power Management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
IRF7105PBF	IFA	类似代替		INFINEON IRF7105PBF 双路场效应管, MOSFET, N和P沟道, 2.3 A, 25 V, 100 mohm, 10 V, 3 V
IRF9952TRPBF	International Rectifier	类似代替	SOIC-8	INFINEON IRF9952TRPBF 双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V	PDF
IRF9952TRPBF	Infineon	类似代替	SOIC-8	INFINEON IRF9952TRPBF 双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V	PDF