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Model SI4532CDY-T1-GE3
Description VISHAY SILICONIX SI4532CDY-T1-GE3 场效应管, MOSFET, NP-通道, 30V, 6/-4.3A, SOIC-8
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Brand: Vishay Siliconix
Packaging SOIC-8
Delivery time
Packaging method
Standard packaging quantity 1
1.93  yuan 1.93yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4404) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.038 Ω

 

Technical parameters/dissipated power:

2.78 W

 

Technical parameters/threshold voltage:

1 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Input capacitance (Ciss):

305pF @15V(Vds)

 

Technical parameters/rated power (Max):

2.78 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4384DY-T1-E3 SI4384DY-T1-E3 Vishay Semiconductor 类似代替 SOIC-8
MOSFET N-CH 30V 10A 8-SOIC
PDF
SI4532ADY-T1-GE3 SI4532ADY-T1-GE3 VISHAY 完全替代 SOIC-8
Trans MOSFET N/P-CH 30V 3.7A/3A 8Pin SOIC N T/R
PDF
SI4532ADY-T1-GE3 SI4532ADY-T1-GE3 Vishay Semiconductor 完全替代 SOIC
Trans MOSFET N/P-CH 30V 3.7A/3A 8Pin SOIC N T/R
PDF

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