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Model PHC21025,118

Description NXP PHC21025,118. 场效应管阵列, MOSFET, N与P沟道, 30V, 3.5A, 8-SOIC

Brand: NXP

Packaging SOIC-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.08 Ω
Technical parameters/polarity:	N-Channel, P-Channel
Technical parameters/dissipated power:	2 W
Technical parameters/threshold voltage:	2.8 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	3.50 A
Technical parameters/Input capacitance (Ciss):	250pF @20V(Vds)
Technical parameters/rated power (Max):	2 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	2000 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Packaging:	SOIC-8
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Communications & Networking, Power Management, Industrial, Consumer Electronics
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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