Technical parameters/rated voltage (DC): | 25.0 V |
|
Technical parameters/rated current: | 5.00 A |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 1.50 W |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
|
Technical parameters/Maximum allowable collector current: | 5A |
|
Technical parameters/minimum current amplification factor (hFE): | 45 @2A, 1V |
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Technical parameters/maximum current amplification factor (hFE): | 180 |
|
Technical parameters/rated power (Max): | 15 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-225-3 |
|
Dimensions/Packaging: | TO-225-3 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Other/Minimum Packaging: | 500 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJE200
|
ON Semiconductor | 功能相似 | TO-225-3 |
功率晶体管互补硅 POWER TRANSISTORS COMPLEMENTARY SILICON
|
||
MJE200
|
Fairchild | 功能相似 |
功率晶体管互补硅 POWER TRANSISTORS COMPLEMENTARY SILICON
|
|||
MJE200
|
ST Microelectronics | 功能相似 |
功率晶体管互补硅 POWER TRANSISTORS COMPLEMENTARY SILICON
|
|||
MJE200G
|
ON Semiconductor | 功能相似 | TO-126-3 |
ON SEMICONDUCTOR MJE200G 单晶体管 双极, NPN, 40 V, 65 MHz, 15 W, 5 A, 10 hFE 新
|
||
MJE200STU
|
Freescale | 功能相似 | TO-126 |
Transistor, Bjt, Npn, 25V v(Br)Ceo, 5A i(c), To-126
|
||
MJE200STU
|
Fairchild | 功能相似 | TO-126-3 |
Transistor, Bjt, Npn, 25V v(Br)Ceo, 5A i(c), To-126
|
||
MJE200STU
|
ON Semiconductor | 功能相似 | TO-126-3 |
Transistor, Bjt, Npn, 25V v(Br)Ceo, 5A i(c), To-126
|
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