Technical parameters/frequency: 65 MHz
Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 5.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 15 W
Technical parameters/gain bandwidth product: 65 MHz
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/maximum allowable collector current: 5A
Technical parameters/minimum current amplification factor (hFE): 45 @2A, 1V
Technical parameters/Maximum current amplification factor (hFE): 180
Technical parameters/rated power (Max): 15 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 15000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 8 mm
External dimensions/width: 3.25 mm
External dimensions/height: 11.2 mm
External dimensions/packaging: TO-126-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJE200
|
ON Semiconductor | 功能相似 | TO-225-3 |
功率晶体管互补硅 POWER TRANSISTORS COMPLEMENTARY SILICON
|
||
MJE200
|
Fairchild | 功能相似 |
功率晶体管互补硅 POWER TRANSISTORS COMPLEMENTARY SILICON
|
|||
MJE200
|
ST Microelectronics | 功能相似 |
功率晶体管互补硅 POWER TRANSISTORS COMPLEMENTARY SILICON
|
|||
MJE200G
|
ON Semiconductor | 类似代替 | TO-126-3 |
ON SEMICONDUCTOR MJE200G 单晶体管 双极, NPN, 40 V, 65 MHz, 15 W, 5 A, 10 hFE 新
|
||
|
|
ON Semiconductor | 类似代替 | TO-126 |
Trans GP BJT NPN 25V 5A 3Pin(3+Tab) TO-126 Rail
|
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