Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126
External dimensions/packaging: TO-126
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJE200
|
ON Semiconductor | 功能相似 | TO-225-3 |
功率晶体管互补硅 POWER TRANSISTORS COMPLEMENTARY SILICON
|
||
MJE200
|
Fairchild | 功能相似 |
功率晶体管互补硅 POWER TRANSISTORS COMPLEMENTARY SILICON
|
|||
MJE200
|
ST Microelectronics | 功能相似 |
功率晶体管互补硅 POWER TRANSISTORS COMPLEMENTARY SILICON
|
|||
MJE200G
|
ON Semiconductor | 类似代替 | TO-126-3 |
ON SEMICONDUCTOR MJE200G 单晶体管 双极, NPN, 40 V, 65 MHz, 15 W, 5 A, 10 hFE 新
|
||
|
|
ON Semiconductor | 类似代替 | TO-126 |
Trans GP BJT NPN 25V 5A 3Pin(3+Tab) TO-126 Rail
|
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