Encapsulation parameters/Encapsulation: | SOT-23 |
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Dimensions/Packaging: | SOT-23 |
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Other/maximum source drain voltage VdsDrain Source Voltage: | 30v |
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Other/Gate Source Breakdown Voltage V (BR) GSGate Source Voltage: | -30v |
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Other/drain current (Vgs=0V) IDSSDrain Current: | 5~30ma |
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Other/Off Voltage Vgs (off) Gate Source Cut off Voltage: | -0.5~-3v |
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Other/dissipated power PdPower Dissipation: | 350mW/0.35W |
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Other/Specification PDF: | __ |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBF4392LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBF4392LT1G 晶体管, JFET, JFET, 30 V, 25 mA, 75 mA, -5 V, SOT-23, JFET
|
||
MMBF4393
|
NXP | 类似代替 | SOT-23 |
ON Semiconductor MMBF4393 N通道 JFET 晶体管, Vds=0.4 V, Idss: 5 → 30mA, 3引脚 SOT-23封装
|
||
MMBF4393
|
Fairchild | 类似代替 | SOT-23-3 |
ON Semiconductor MMBF4393 N通道 JFET 晶体管, Vds=0.4 V, Idss: 5 → 30mA, 3引脚 SOT-23封装
|
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