Technical parameters/breakdown voltage (collector emitter): | 10 V |
|
Technical parameters/gain: | 13.5 dB |
|
Technical parameters/minimum current amplification factor (hFE): | 50 @20mA, 8V |
|
Technical parameters/rated power (Max): | 200 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | TO-253-4 |
|
Dimensions/Height: | 1.1 mm |
|
Dimensions/Packaging: | TO-253-4 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NE68139-T1-A
|
California Eastern Laboratories | 完全替代 | TO-253-4 |
射频(RF)双极晶体管 NPN High Frequency
|
||
NE68139-T1-A
|
NEC | 完全替代 | SOT-143 |
射频(RF)双极晶体管 NPN High Frequency
|
||
NE68139-T1-A
|
Renesas Electronics | 完全替代 |
射频(RF)双极晶体管 NPN High Frequency
|
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