Technical parameters/frequency: | 9000 MHz |
|
Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 200 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 10 V |
|
Technical parameters/gain: | 13.5 dB |
|
Technical parameters/minimum current amplification factor (hFE): | 50 @20mA, 8V |
|
Technical parameters/rated power (Max): | 200 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 200 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | TO-253-4 |
|
Dimensions/Length: | 2.9 mm |
|
Dimensions/Width: | 1.5 mm |
|
Dimensions/Height: | 1.1 mm |
|
Dimensions/Packaging: | TO-253-4 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NE68139-A
|
California Eastern Laboratories | 完全替代 | TO-253-4 |
Trans GP BJT NPN 10V 0.065A 4Pin SOT-143
|
||
|
|
Silicon Strorage Technology | 完全替代 | SOT-143 |
Trans GP BJT NPN 10V 0.065A 4Pin SOT-143
|
||
NE68139-T1
|
California Eastern Laboratories | 类似代替 | TO-253-4 |
Trans RF BJT NPN 10V 0.065A 4Pin(3+Tab) SOT-143 T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review