Technical parameters/breakdown voltage (collector emitter): | 10 V |
|
Technical parameters/gain: | 13.5 dB |
|
Technical parameters/minimum current amplification factor (hFE): | 50 @20mA, 8V |
|
Technical parameters/rated power (Max): | 200 mW |
|
Encapsulation parameters/Encapsulation: | SOT-143 |
|
Dimensions/Packaging: | SOT-143 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NE68139-A
|
California Eastern Laboratories | 完全替代 | TO-253-4 |
Trans GP BJT NPN 10V 0.065A 4Pin SOT-143
|
||
|
|
Silicon Strorage Technology | 完全替代 | SOT-143 |
Trans GP BJT NPN 10V 0.065A 4Pin SOT-143
|
||
NE68139-T1
|
California Eastern Laboratories | 类似代替 | TO-253-4 |
Trans RF BJT NPN 10V 0.065A 4Pin(3+Tab) SOT-143 T/R
|
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