Technical parameters/dissipated power: | 350 mW |
|
Technical parameters/breakdown voltage: | 40 V |
|
Technical parameters/Input capacitance (Ciss): | 16pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 350 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 350 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Length: | 2.9 mm |
|
Dimensions/Width: | 1.3 mm |
|
Dimensions/Height: | 1.04 mm |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Industrial, power management |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with standard/REACH SVHC version: | 2014/12/17 |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBF4092
|
Fairchild | 功能相似 | SOT-23-3 |
ON Semiconductor MMBF4092 N通道 JFET 晶体管, Vds=0.2 V, Idss: min. 15mA, 3引脚 SOT-23封装
|
||
SST201-T1-E3
|
VISHAY | 功能相似 | TO-236 |
VISHAY SST201-T1-E3 JFET Transistor, JFET, -40V, 200A, 1mA, -1.5V, TO-236, JFET
|
||
SST201-T1-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
VISHAY SST201-T1-E3 JFET Transistor, JFET, -40V, 200A, 1mA, -1.5V, TO-236, JFET
|
||
SST204-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
JFET N-CH 25V 0.7mA SOT-23
|
||
SST204-E3
|
Vishay Semiconductor | 功能相似 | TO-236 |
JFET N-CH 25V 0.7mA SOT-23
|
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