Technical parameters/polarity: | Dual N-Channel, Dual P-Channel |
|
Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Continuous drain current (Ids): | 540 mA |
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Technical parameters/Input capacitance (Ciss): | 72pF @16V(Vds) |
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Technical parameters/rated power (Max): | 250 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 280 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-563 |
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Dimensions/Packaging: | SOT-563 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDY4000CZ
|
ON Semiconductor | 类似代替 | SOT-563 |
ON Semiconductor PowerTrench 系列 双 Si N/P沟道 MOSFET FDY4000CZ, 350 mA,600 mA, Vds=20 V, 6引脚
|
||
NTZD3156CT1G
|
ON Semiconductor | 完全替代 | SOT-563-6 |
0.54/-0.43A,20V互补型功率MOSFET
|
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