Technical parameters/number of pins: | 6 |
|
Technical parameters/drain source resistance: | 0.7 Ω |
|
Technical parameters/dissipated power: | 0.625 W |
|
Technical parameters/threshold voltage: | 600 mV |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/Input capacitance (Ciss): | 60pF @10V(Vds) |
|
Technical parameters/rated power (Max): | 446 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 625 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-563 |
|
Dimensions/Length: | 1.6 mm |
|
Dimensions/Width: | 1.2 mm |
|
Dimensions/Height: | 0.5 mm |
|
Dimensions/Packaging: | SOT-563 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Industrial, power management |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTZD3155CT1G
|
ON Semiconductor | 功能相似 | SOT-563-6 |
ON SEMICONDUCTOR NTZD3155CT1G 双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
|
||
NTZD3156CT2G
|
ON Semiconductor | 类似代替 | SOT-563 |
小信号MOSFET Small Signal MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review