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Model NTZD3156CT1G
Description 0.54/-0.43A,20VComplementary power MOSFET
Product QR code
Brand: ON Semiconductor
Packaging SOT-563-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.73  yuan 0.73yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1146) Minimum order quantity(1)
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Technical parameters/polarity:

Dual N-Channel, Dual P-Channel

 

Technical parameters/dissipated power:

280 mW

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/Continuous drain current (Ids):

540 mA

 

Technical parameters/Input capacitance (Ciss):

72pF @16V(Vds)

 

Technical parameters/rated power (Max):

250 mW

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

280 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

SOT-563-6

 

Dimensions/Length:

1.6 mm

 

Dimensions/Width:

1.2 mm

 

Dimensions/Height:

0.55 mm

 

Dimensions/Packaging:

SOT-563-6

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTZD3155CT1G NTZD3155CT1G ON Semiconductor 类似代替 SOT-563-6
ON SEMICONDUCTOR NTZD3155CT1G 双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
PDF
NTZD3156CT2G NTZD3156CT2G ON Semiconductor 完全替代 SOT-563
小信号MOSFET Small Signal MOSFET
PDF

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