Technical parameters/drain source resistance: | 0.85 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 50 W |
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Technical parameters/threshold voltage: | 3 V |
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Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/Continuous drain current (Ids): | 4.5A |
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Technical parameters/rise time: | 5 ns |
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Technical parameters/Input capacitance (Ciss): | 470pF @25V(Vds) |
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Technical parameters/rated power (Max): | 50 W |
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Technical parameters/descent time: | 10 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 50W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.41 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Power Management, Consumer Electronics, Communications & Networking |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPD04N50C3
|
Infineon | 类似代替 | TO-252-3 |
INFINEON SPD04N50C3 晶体管, MOSFET, N沟道, 4.5 A, 560 V, 0.85 ohm, 10 V, 3 V
|
||
SPD06N60C3BTMA1
|
Infineon | 类似代替 | TO-252-3 |
单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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