Technical parameters/rated voltage (DC): 560 V
Technical parameters/rated current: 4.50 A
Technical parameters/rated power: 42 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.85 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 50 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 560 V
Technical parameters/Continuous drain current (Ids): 4.50 A
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 470pF @25V(Vds)
Technical parameters/rated power (Max): 50 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 50W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.41 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPD04N50C3ATMA1
|
Infineon | 类似代替 | TO-252-3 |
Infineon CoolMOS™C3 功率 MOSFET ### MOSFET 晶体管，Infineon Infineon 提供庞大且全面的 MOSFET 设备组合，其中包括 CoolMOS、OptiMOS 和 StrongIRFET 系列。它们提供同类最佳性能，实现更高效率、功率密度和成本效益。需要高质量和增强型保护功能的设计获益于符合 AEC-Q101 汽车工业标准的 MOSFET。
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