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Model SPD06N60C3BTMA1

Description 单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

Brand: Infineon

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	650 V
Technical parameters/rated current:	6.20 A
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	74 W
Technical parameters/Input capacitance:	620 pF
Technical parameters/gate charge:	31.0 nC
Technical parameters/drain source voltage (Vds):	650 V
Technical parameters/Continuous drain current (Ids):	6.20 A
Technical parameters/rise time:	12 ns
Technical parameters/Input capacitance (Ciss):	620pF @25V(Vds)
Technical parameters/rated power (Max):	74 W
Technical parameters/descent time:	10 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	74W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Not Recommended for New Designs
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	SPD04N50C3ATMA1	Infineon	类似代替	TO-252-3	Infineon CoolMOS™C3 功率 MOSFET ### MOSFET 晶体管，Infineon Infineon 提供庞大且全面的 MOSFET 设备组合，其中包括 CoolMOS、OptiMOS 和 StrongIRFET 系列。它们提供同类最佳性能，实现更高效率、功率密度和成本效益。需要高质量和增强型保护功能的设计获益于符合 AEC-Q101 汽车工业标准的 MOSFET。	PDF