Technical parameters/rated voltage (DC): | 400 V |
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Technical parameters/rated current: | 1.70 A |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 25.0 W |
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Technical parameters/drain source voltage (Vds): | 400 V |
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Technical parameters/Leakage source breakdown voltage: | 400 V |
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Technical parameters/Continuous drain current (Ids): | 1.70 A |
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Technical parameters/rise time: | 9.90 ns |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFU310
|
International Rectifier | 完全替代 |
MOSFET N-CH 400V 1.7A I-PAK
|
|||
IRFU310
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 400V 1.7A I-PAK
|
|||
IRFU310
|
VISHAY | 完全替代 | IPAK |
MOSFET N-CH 400V 1.7A I-PAK
|
||
IRFU310
|
Vishay Siliconix | 完全替代 | TO-251-3 |
MOSFET N-CH 400V 1.7A I-PAK
|
||
|
|
Samsung | 功能相似 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
|||
|
|
KEC | 功能相似 | 3 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
||
U310
|
Vishay Semiconductor | 功能相似 | TO-206 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
||
U310
|
Calogic | 功能相似 | 500 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
||
U310
|
Intersil | 功能相似 | TO-52 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
||
U310
|
Vishay Siliconix | 功能相似 | SOT-23 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
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