Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Other/Packaging Methods: Tube
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFU310PBF
|
International Rectifier | 完全替代 | Through Hole |
Trans MOSFET N-CH 400V 1.7A 3Pin(3+Tab) TO-251AA
|
||
IRFU310PBF
|
Vishay Siliconix | 完全替代 | TO-251-3 |
Trans MOSFET N-CH 400V 1.7A 3Pin(3+Tab) TO-251AA
|
||
|
|
Samsung | 功能相似 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
|||
|
|
KEC | 功能相似 | 3 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
||
U310
|
Vishay Semiconductor | 功能相似 | TO-206 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
||
U310
|
Calogic | 功能相似 | 500 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
||
U310
|
Intersil | 功能相似 | TO-52 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
||
U310
|
Vishay Siliconix | 功能相似 | SOT-23 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review