Technical parameters/dissipated power: 2.5W (Ta), 25W (Tc)
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/Input capacitance (Ciss): 170pF @25V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 25W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFU310PBF
|
International Rectifier | 完全替代 | Through Hole |
Trans MOSFET N-CH 400V 1.7A 3Pin(3+Tab) TO-251AA
|
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IRFU310PBF
|
Vishay Siliconix | 完全替代 | TO-251-3 |
Trans MOSFET N-CH 400V 1.7A 3Pin(3+Tab) TO-251AA
|
||
|
|
Samsung | 功能相似 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
|||
|
|
KEC | 功能相似 | 3 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
||
U310
|
Vishay Semiconductor | 功能相似 | TO-206 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
||
U310
|
Calogic | 功能相似 | 500 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
||
|
U310
|
Intersil | 功能相似 | TO-52 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
||
U310
|
Vishay Siliconix | 功能相似 | SOT-23 |
Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
|
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